Topics in the modelling of phase change memory elements

Abstract:

I will discuss collaborative work on the computational modelling of electrical circuit elements (PCRAM) that use different phases of chalcogenide materials (in particular GeSbTe alloys) to store information in a non-volatile manner. Particular features that we have modelled include some of the challenges to multi-level programming of these devices by purely electrical means, as well as an approach to the modelling of spontaneous rapid relaxation oscillations that can appear due to threshold switching in the semiconductor phase.
This is joint work with C David Wright (Exeter) and Jorge Vazquez Diosdado (Essex).